Factory Lead Time  

9 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

70A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

150W Tc

Turn Off Delay Time  

32 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2005

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

14mOhm

Voltage - Rated DC  

60V

Current Rating  

70A

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Case Connection  

DRAIN

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

14m Ω @ 70A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

156nC @ 20V

Rise Time  

137ns

Vgs (Max)  

±20V

Fall Time (Typ)  

24 ns

Continuous Drain Current (ID)  

70A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Height  

9.4mm

Length  

10.67mm

Width  

4.83mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free